Two-dimensional numerical analysis of the collection mechanism of single event transient current in NMOSFET

Abstract

The single event effects in NMOSFET at different values of drain bias, gate length and striking location are thoroughly analyzed by two-dimensional numerical simulator in this paper. The results show that single event transient current increases with the increase of drain bias and with the decrease of gate length. Furthermore, single event transient current varies with the electric field at some places in the device. The present study provides important guidance on the devices design of mitigating the single event effects.