Investigation of high hole concentration Mg-doped InGaN epilayer
-
Published:2006
Issue:9
Volume:55
Page:4951
-
ISSN:1000-3290
-
Container-title:Acta Physica Sinica
-
language:
-
Short-container-title:Acta Phys. Sin.
Author:
Liu Nai-Xin ,Wang Huai-Bing ,Liu Jian-Ping ,Niu Nan-Hui ,Zhang Nian-Guo ,Li Tong ,Xing Yan-Hui ,Han Jun ,Guo Xia ,Shen Guang-Di ,
Abstract
We investigated the optical and electrical properties of Mg-doped InxGa1-xN(0≤x≤0.3) grown by metalorganic chemical vapor deposition with different In and Mg contents. When the Mg doping concentration was fixed, the hole concentration of samples increased remarkably with the elevation of In mole fraction. The highest hole concentration achieved was 2.4×1019cm-3,the doping efficiency increased nearly by two orders. We explained the carrier transition mechanism with the help of the photoluminesce spectra. In addition, we obtained the activation energy of Mg and the band position of deep donor in InGaN:Mg samples.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献