Numerical model of ITO /organic semiconductor/metal organic light emitting device
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Published:2008
Issue:9
Volume:57
Page:5928
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Hu Yue ,Rao Hai-Bo ,Li Jun-Fei ,
Abstract
A numerical model of organic light emitting device (OLED) with metal/organic/metal structure was discussed on the basis of drift-diffusion equations in this paper. First,the influence of charges localized near the electrodes to the J-V curve was calculated and we got the same result of the literature. Second, the J-V curve of OLED with structure of ITO/PPV/Ca was simulated. In the simulation, the case of positive charge distribution localized near the anode was considered. The calculated J-V curve was in good agreement with the experiment. The charge creates an additional barrier and has a noted influence on the current density.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
2 articles.
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