Comparative study on epitaxial growth of stanene and bismuthene on InSb(111) substrate

Abstract

Two-dimensional topological insulator (2DTI) with a large bandgap is prerequisite for potentially observing quantum spin Hall and other quantum phenomena at room-temperature. At present, the synthesis of such materials possesses formidable challenge. In this work, we report our experimental results on synthesis of large-gap 2DTI stanene and bismuthene on B-faced InSb(111) substrate by using molecular beam epitaxy technology. We find that both the stanene and bismuthene can be synthesized by following the forming of a wetting layer on InSb(111) substrate, but with different prospects. On the one hand, it is found that the binding energy between Sn and the substrate is not strong enough to compete the binding force between Sn atoms during the post annealing, thus resulting in a wetting layer composed of many small domains. It significantly restricts the quality of the stanene epilayers. On the other hand, the Bi atoms on InSb(111) are found more stable than the Sn atoms on InSb(111), resulting in a uniform wetting layer which can be optimized by adjusting substrate temperature and post-annealing conditions. Large size and single crystal bismuthene domains have been observed under the STM measurement, which also indicates a bulk gap of ～0.15 eV and metallic edge states.