Opto-thermionic refrigeration of semiconductor heterostructure
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Published:2005
Issue:9
Volume:54
Page:4345
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Han Peng ,Jin Kui-Juan ,Zhou Yue-Liang ,Zhou Qing-Li ,Wang Xu ,Zhao Song-Qing ,Ma Zhong-Shui ,
Abstract
Numerical method has been used to analyze the opto-thermionic refrigeration proc ess of semiconductor heterostructure. Based on the drift-diffusion model, curren t continuity equation and Poisson equation are employed to calculate the distrib ution of carriers, the radiative recombination rate and the Auger recombination rate of the semiconductor. In addition, we have calculated the effect of the cha nging of barrier height and the doping density on the refrigeration rate. Thus t he optimum conditions of opto-thermionic refrigeration have been obtained based on these results. This work is of great significance for guiding the experiment research in the future.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy