Author:
Tang Tian-Tian ,Wang De-Hua ,Huang Kai-Yun ,Wang Shan-Shan ,
Abstract
Using the closed orbit theory, we study the photo-detachment of H- in a magnetic field near a dielectric surface. The photo-detachment cross section of this system is also derived and calculated. It is found that the photo-detachment cross section is not only related to the magnetic field strength, but also depends on the dielectric constant. For a given ion-surface distance and dielectric constant, with the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillatory structure in the photo-detachment cross section becomes much more complicated. On the other hand, for a given magnetic field strength, the dielectric constant also has a great influence on the photo-detachment process of negative ion. Above the ionization threshold, the photo-detachment cross section becomes oscillatory. With the increase of the dielectric constant, the oscillatory structure in the cross-section becomes much more complicated. Therefore we can control the photo-detachment of negative ion by changing the magnetic field strength and the dielectric constant. This study provides a new understanding of the photo-detachment process of negative ion in the presence of external fields and surfaces.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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