Author:
Song Qing ,Ji Li ,Quan Wei-Long ,Zhang Lei ,Tian Miao ,Li Hong-Xuan ,Chen Jian-Min , ,
Abstract
Molecular dynamics simulations are carried out to investigate the effect of low energy CH radical on the growth of hydrogenated carbon film. The results show that the adsorption rate of CH on clear diamond(111) is about 98%, while on hydrogenated diamond (111) the adsorption rate is lower than 1%. It indicates that the selective adsorption of low energy CH radical at the unsaturated surface C site is the dominated mechanism of the hydrogenated carbon film growth in PECVD.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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