Author:
Qin Qing-Song ,Ma Xin-Long ,Shao Yu ,Yang Xing-Yu ,Sheng Hong-Fei ,Yang Jing-Zhong ,Yin Yao ,Zhang Jia-Chi ,
Abstract
The novel electron trapping material of Sr2SnO4: Tb3+, Li+ for optical storage is synthesized by the solid state method. Stimulated by 980 nm infrared laser, the material shows intense up-conversion photostimulated luminescence. The ultraviolet light at 292 nm is an optimal writing source. The material has less shallow traps, which corresponds to its weak afterglow (less than 500 s). On the other hand, this material has lots of deep traps. Thus, the Sr2SnO4:Tb3 +, Li+ is a promising optical storage material. In addition, we propose the optical storage luminescence mechanism of Sr2SnO4:Tb3 +, Li +.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference14 articles.
1. Johnson E J, Kafalas J, Dyes W A 1982 Appl. Phys. Lett. 40 993
2. Cho Y, Kim D S, Choe B, Lim H, Kim D 1997 Phys. Rev. B 56 R4375
3. Zhang Y, Wang B, Liu X, Xiao M 2010 J. Appl. Phys. 107 103502
4. Gong X, Chen W J 1998 Appl. Phys. Lett. 73 2875
5. Yamashita S A,Ogawa N 1989 Phys.Status. Solidi B 118 89
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