Author:
Zhang Hong-Wei ,Chen Gai-Rong ,Zhang Li-Wei ,Lu Jing-Xiao ,Wen Shu-Tang ,
Abstract
During the process of plasma enhanced chemical vapor deposition, the growth rate of microcrystalline silicon films must be improved to reduce manufacture cost. With the increase of growth rate, the photoelectrical properties of such films will be greatly decreased. The main cause is the diffusion length of the precursors on the film surface decreases. In this study, a quantitative kinetic model was developed and the reaction balance equations of SiH3 and H were constructed, and the deposition rate, diffusion length and their influencing factors were obtained. We find that the deposition rate is determined by the fluxes of both SiH3 and H. The diffusion length of precursors is determined by the substrate temperature and the configuration of the surface silicon-hydrogen bonds. The diffusion length has a higher value when the growing film surface is covered by mono-hydrides, it has a smaller value when covered by tri-hydride, and it has a value close to zero when covered by dangling bonds.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference37 articles.
1. Zhang Q Y, Ma T C, Pan Z Y, Tang J Y 2000 Acta Phys. Sin. 49 297 (in Chnese) [张庆瑜、马腾才、潘正瑛、汤家镛 2000 物理学报 49 297]
2. Yang N, Chen G H, Zhang Y, Gong W B, Zhu H S 2000 Acta Phys. Sin. 49 2225 (in Chinese) [杨 宁、陈光华、张 阳、公维宾、朱鹤孙 2000 物理学报 49 2225]
3. Ma T B, Hu Y Z, Wang H 2007 Acta Phys. Sin. 56 480 (in Chinese) [马天宝、胡元中、王 慧 2007 物理学报 56 480]
4. Liu Z L, Wei H L, Wang H W, Wang J Z 1999 Acta Phys. Sin. 48 1302 (in Chinese) [刘祖黎、魏合林、王汉文、王均震 1999 物理学报 48 1302]
5. Pflüger A, Schroder B, Bartaa H J 2003 Thin Solid Films 430 73
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献