Author:
Lü Tie-Yu ,Chen Jie ,Huang Mei-Chun ,
Abstract
The prospects of Si-based optical emitting materials are optimistic because the materials are compatible with silicon microelectronics technology. Therefore, many experimental and theoretical studies are directed to the design of direct band-gap Si-based materials. Based on the core state effect, the electronegativity differences effect of component atoms and the symmetry effect, Si-based superlattices Si1－xSnx/Si were designed. We found that Si0.875Sn0.125/Si is a direct band-gap material. In the density functional theory frame, the results of plane pesupotential method show that Si0.875Sn0.125/Si is a direct band-gap superlattice with minimum band-gap at Γ point. We predict that the band gap of the material is 0.96 eV with the help of GW approximation method.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference20 articles.
1. Gnutzmanu U, Clavsecker K 1974 Appl. Phys. 3 9
2. Schfer H C, Rsen B, Moritz H, Rizzi A, Lengeler B, Lüth H, Gerthsen D 1993 Appl. Phys. Lett. 62 2271
3. Canham L T 1990 Appl. Phys. Lett. 57 1045
4. Cullis A G, Canham L T 1991 Nature 353 335
5. Hirschman K D, Tsybeskov L, Duttagupta S P, Fauchet P M 1996 Nature 384 338