Characterization of ZrN films deposited by ICP enhanced RF magnetron sputtering

Abstract

ZrN films have been prepared by inductively coupled plasma (ICP)-enhanced RF magnetron sputtering. The effects of substrate temperature and ICP power on the microstructure and properties of ZrN films have been investigated systemically. The ZrN films show (111) preferred orientation with the substrate temperature below 300℃. ZrN(200) is observed at 450℃ regardless of ICP power, and the texture coefficient of (111) decreases. Columnar structure, which is observed in the films deposited by conventional magnetron sputtering, disappears in the film synthesized at ICP power of 200 W and substrate temperature of 300℃. With the increase of substrate temperature, N/Zr ratio and the resistivity of films decrease. The films deposited with ICP power on show denser structure, higher hardness and lower stress than those by conventional magnetron sputtering.