Author:
Wang Yue ,Zhang Feng-Xia ,Wang Chun-Jie ,Gao Chun-Xiao , ,
Abstract
The pressure dependence of electrical properties of ZnSe was observed by means of in situ high pressure DC electrical resistivity measurement and AC impedance spectrum methods in a range of 0–35 GPa. Two structure phase transitions have been observed corresponding to the wurtzite-cinnabar-rocksalt transitions. The temperature dependence of the electrical resistivity of ZnSe is measured under different pressures. Results show that ZnSe undergoes a semiconductor to metal transition at 12 GPa. AC data also proves the above results. The pressure dependence of grain and grain boundary resistances indicates that the cinnabar is close to an isotropic material.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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