Photoinduced refractive index change effect of amorphous Sn-doped As2S8 film and its application in stripe waveguide fabrication
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Published:2009
Issue:5
Volume:58
Page:3238
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Sun Bei ,Chen Bao-Xue ,Sui Guo-Rong ,Wang Guan-De ,Zou Lin-Er ,Hiromi Hamanaka ,Mamoru Iso ,
Abstract
Photoinduced changes in refractive index and film thickness of amorphous Sn1As20S79 semiconductor film are studied experimentally. The emperical rules in as-evaporated，annealed and well-illuminated states are obtained respectively. An ultraviolet irradiation technique is presented and employed successfully to fabricate a Sn1As20S79 stripe waveguide, which shaws good characteristics of a waveguide under the 632.8nm guided mode excitation.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
2 articles.
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