Synthesis of silicon oxide nanocluster and C-Si-O nanospheres morphology and photoluminscence Fourier transform infrared spectroscopy study
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Published:2009
Issue:12
Volume:58
Page:8612
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Zheng Li-Ren ,Huang Bai-Biao ,Wei Ji-Yong ,
Abstract
Silicon oxide nanocluster and C-Si-O nanospheres are fabricated by the chemical vapor deposition method at 1100℃,in flowing N2/H2 atmosphere using the ferrcene and the silicon oil (201) as the raw material and the catalyzer, respcetively. The silicon oxide nanowires are uniform with diameter of 5—40 nm and length up to hundreds of nanometer. The diameter of the C-Si-O solid-nanospheres is 100—300 nm. SEM,TEM,EDS,FTIR and PL were used to characterize the microstructure,composition and optical propertics of the nanocluster and the C-Si-O nanospheres. Energy dispersive X-ray spectrum analysis reveals that the C-Si-O nanospheres consist of C,Si and O elements in an atomic ratio of approximately 1.13∶1∶2.35. The nanoclusters show IR absorption peaks at 474,802 and 1100 cm-1. The PL peak of the nanoclusters is at 440 nm. It is very curious that the PL of the C-Si-O solid-nanospheres possesses the red,green and blue——trichromic luminescent peeks.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
2 articles.
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