Author:
Lü Hong-Liang ,Zhang Yi-Men ,Zhang Yu-Ming ,Che Yong ,Wang Yue-Hu ,Chen Liang ,
Abstract
The small signal equivalent circuit of SiC MESFETs has been studied and the parasitic and intrinsic elements have been extracted with both numerical and analytical methods. The trapping-emission mechanism is discussed in detail. The proposed model is valuable for the optimization of the device design and processing.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
5 articles.
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