Electroluminescence from SnO2/p+-Si heterostructured light-emitting device：enhancing its intensity via capping a TiO2 film
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Published:2014
Issue:17
Volume:63
Page:177302
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Jiang Hao-Tian ,Yang Yang ,Wang Can-Xing ,Zhu Chen ,Ma Xiang-Yang ,Yang De-Ren ,
Abstract
Low-voltage (current) driven electroluminescence (EL) has been achieved in the light-emitting device (LED) with a SnO2/p+-Si heterostructure, which is formed by sputtering SnO2 film on a p+-Si substrate, followed by annealing at 800 ℃ in O2 ambient. Furthermore, by means of capping a TiO2 film onto the SnO2 film, the modified LED exhibits significantly enhanced EL. The densification of SnO2 film as a result of the TiO2-capping is responsible for reducing the non-radiative centers. Moreover, the large refractive index and appropriate thickness of TiO2-capped layer are favorable for the extraction of emitted light from SnO2 film. Such two effects of TiO2-capping contribute to the aforementioned enhanced EL.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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