STUDY ON PLASMA ETCHING OF β-SiC THIN FILMS IN SF6 AND THE SF6+O2 MIXTURES

Abstract

Plasma etching(PE) of cubic β-SiC single crystalline thin films produced via chemical vapor deposition(CVD) has been performed in SF6 and the SF6+O2 mixtures. Experimental results show that the maxima of etching rate are reached when gas mixing ratio is about 40%. The Auger energy spectra indicate that PE process in SF6 and the SF6+O2 mixtures does not yield a residual SiC with a C-rich surface. This technique and experimental results may serve as the foundation of fabricating various devices of SiC.