RADIATIVE TRANSITION AND NONRADIATIVE PROCESS IN ZnS:Ho3+
-
Published:1986
Issue:12
Volume:35
Page:1574
-
ISSN:1000-3290
-
Container-title:Acta Physica Sinica
-
language:
-
Short-container-title:Acta Phys. Sin.
Author:
SHEN YONG-RONG ,ZHANG HONG ,
Abstract
The radiative transition and nonradiative process have been studied for Ho3+ ions in ZnS semiconductor. From the integrated emission intensity and excited state lifetime, the intensity uarameters of ZnS:Ho3+ were obtained and radiation probabilities and lifetimes of Ho3+ ion's nine energy levels were calculated. Nonradiative process among 5G6,3K8,5F2,5F3 and 5S2 ( 5F4) was investigated by measuring the emission intensity and fluorescence lifetime at differenttemperatures. 5G6, 3K8, 5F2 and 5F3 are in thermal equilibrium and there are 5 phononsparticipating in the multiphonon relaxation between 5F3 and 5S2( 5F4).
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献