THE STUDY OF EPITAXIAL GROWTH ZnO THIN FILM ON A (0112) SAPPHIRE SUBSTRATE USING ECR PLASMA SPUTTERING METHOD

Abstract

Epitaxial growth of ZnO film on sapphire substrate has important applications in surface acoustic wave and acousto-optical transducers. An epitaxial ZnO film has been grown on a (0112) sapphire substrate using ECR plasma sputtering method at a substrate temperature of 380℃. The film is colourless, transparent and surface smooth. In order to explore the relationship between the deposition parameter and crystal structure of ZnO film, it have been studied that epitaxied growth of ZnO film in different substrate temperatures and deposition rates by XRD method.