Simulation of step response of silane low-temperature pasma(1)
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Published:2005
Issue:7
Volume:54
Page:3251
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Yang Jing ,Li Jing-Zhen ,Sun Xiu-Quan ,Gong Xiang-Dong ,
Abstract
Understanding of the transient response of electronegative radio-frequency glow plasmas is important for process control, better selectivity etch technology and charge free etching. We have investigated the step responses of RF(1356MHz) silane gas plasmas at a pressure of 05 Torr(05×10333Pa). The result showed that, when the power voltage changed stepwise from 550V to 350V, a steady sta te pulsed plasma oscillation at a few kHz appeared. The transient behavior and o scillation were interpreted in terms of the transport and chemistry of charge ca rriers in the plasma.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy