Author:
Zhang Lin ,Yang Fei ,Xiao Jian ,Gu Wen-Ping ,Qiu Yan-Zhang , ,
Abstract
The operational mechanism of normally-off type bipolar-mode SiC junction field effect transistor (BJFET) is studied by using a two-dimensional numerical model. Compared with the unipolar-mode SiC JFET, the bipolar-mode can reduce the on-state resistor of the SiC JFET effectively and compromise between the on-state and off-state characteristic of the device. The simulation resluts also show that switching time of BJFET increases remarkably.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference22 articles.
1. Zhang Y M 1998 Ph. D. Dissertation (Xi'an: Xidian University) (in Chinese) [张玉明 1998 博士学位论文 (西安: 西安电子科技大学)]
2. Matsunami H 2006 Microelectron Engineering 83 2
3. Yang Y T, Geng Z H, Duan B X, Jia H J, Yu C, Ren L L 2010 Acta Phys. Sin. 59 0566 (in Chinese)[杨银堂、 耿振海、 段宁兴、 贾护军、 余 涔、 任丽丽 2010 物理学报 59 0566]
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