Author:
He Chao-Hui ,Geng Bin ,Yang Hai-Liang ,Chen Xiao-Hua ,Li Guo-Zheng ,Wang Yan-Ping ,
Abstract
Mechanism of irradiation effects is analyzed for floating gate read only memorie s (ROMs). Phenomena in experiments are reasonably explained. It is proposed that failures in devices result from oxide trapped charge and interface trapped char ge generated by radiation in memory cells and peripheral circuitry. The neutron, proton and 60Co γ irradiation effects in FLASH ROM and EEPROM a re total dose effects.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
5 articles.
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