Identification for hole transporting properties of NPB based on particle swarm optimization algorithm

Abstract

In order to study the carrier transporting properties in organic semiconductors (OSCs), the samples of single layer structure ITO/NPB/Ag are prepared, and the corresponding admittance model in theory is built. Impedance samples of the structure under different DC bias voltages are obtained by small sinusoidal signal frequency test method. The particle swarm optimization (PSO) algorithm, in which fitness function includes both the real part and the imaginary part of OSC impedance, is used to identify the model parameter including dispersion coefficient M, α and charge-carrier transit time τdc. To validate the proposed method, an equivalent circuit model of the structure, whose time constant τc is identified by least squares method, is built. Two single-layer structures, whose NPB thickness values are respectively 1000 nm and 1200 nm, are tested. Test results show that the charge-carrier transit time τdc is proportional to the time constant τc and the two hole mobility μdc values both satisfy the famous Poole-Frenkel formula.