Crystallization behavior and kinetics mechanism of 20GeS2·80Sb2S3 chalcogenide glass

Abstract

Knowledge of crystallization behavior and kinetics mechanism is essential to achieve the controllable crystallization. Surface crystallization of 20GeS2·80Sb2S3 chalcogenide glass is realized using differential scanning calorimeter technique and heat treatment method. An about 40 μm thick Sb2S3 crystal layer is precipitated after heat treatment at 268℃ (Tg+30℃) for 60 h. Then, non-isothermal method is employed to theoretically analyze the crystallization kinetics of this glass sample. Crystallization activation energy Ec is calculated to be (223.6±24.1) kJ·mol-1, and crystallization rate constant K at 268℃ was obtained to be 1.23×10-4 s-1, indicating that the crystallization of 20GeS2·80Sb2S3 glass is more difficult than that of other chalcogenide glass system, such as GeS2-Ga2S3. The crystal growth index, m and crystal growth dimensionality, n both are equal to 2, which suggests that the crystallization of Sb2S3 glass phase is of 2D growth process. This work would contribute to the fabrication of Sb2S3 crystallites embedded chalcogenide glass-ceramics.