Author:
Nie Meng ,Zhao Yan ,Zeng Yong ,Jiang Yi-Jian ,
Abstract
ZnO thin films with good visible emissions were deposited on Al2O3 substrates by pulsed laser deposition and subsequently annealed at different temperatures in oxygen ambient. The visible emission property of the films varied significantly with different annealing temperatures. The resistivity, carrier concentration and mobility of the films showed certain rules. From the results of X-ray diffraction, scanning electron microscope, photoluminescence and Hall measurements, the mechanism of visible emission and the reason of showing n-type conductivity in native ZnO thin films were analyzed in this paper.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference24 articles.
1. Choi Y S, Kang J W, Hwang D K, Park S J 2010 IEEE T. Electron. 57 2641
2. Qin J M, Tian L F, Zhao D X, Jiang D Y, Cao J M, Ding M, Guo Z 2011 Acta Phys. Sin. 60 113 (in Chinese) [秦杰明, 田立飞, 赵东旭, 蒋大勇, 曹建明, 丁梦, 郭振 2011 物理学报 60 113]
3. Kashiwaba Y, Sugawara K, Haga K 2002 Thin Solid Films 411 8790
4. Ko H J, Chen Y F, Zhu Z 2000 Appl. Phys. Lett. 76 19051907
5. Natsume Y, Sakata H 2000 Thin Solid Films 372 3036
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