Author:
Wang Xiao-Qiang ,Li Jun-Shuai ,Chen Qiang ,Qi Jing ,Yin Min ,He De-Yan ,
Abstract
Silicon thin films were deposited on Al-coated glass substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD) in SiH4/H2 mixtures at a low temperature of 350℃. The structure of the films was characterized by x-ray diffraction, x-ray photoelectron spectrum, atomic force microscopy and spectroscopic ellipsometry. It has been shown that the films are of a highly ordered structure with a strong (111) orientation. Grain size is larger than 300 nm. There is no residual Al in the films. Considering the high electron density in inductively coupled plasma, a preliminary interpretation is given for the mechanism of Al-induced crystallization during low-temperature deposition of Si films.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献