Author:
Zhang Lei ,Ye Hui ,Huangfu You-Rui ,Liu Xu ,
Abstract
Ge is deposited on an ultrathin SiO2 layer obtained chemically at room temperature, followed by annealing process. High density and uniform Ge quantum dots, rather than superdomes in traditional treatment, are obtained. Growth mechanism is suggested to explain the unusual microstructure dependence on annealing temperature. Raman spectrum is used to investigate the strain. Two peaks are found to be around 500 nm and 1350 nm respectively from the photoluminescence characterization.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference20 articles.
1. Liu S R, Huang W Q, Qin Z J 2006 Acta Phys. Sin. 55 2488 (in Chinese) [刘世荣、黄伟其、秦朝建 2006 物理学报 55 2488]
2. Deng N, Chen P Y, Li Z J 2004 Acta Phys. Sin. 53 3136 (in Chinese) [邓 宁、陈培毅、李志坚 2004 物理学报 53 3136]
3. Ma S Y, Zhang B R, Qin G G, Han H X, Wang Z P, Li G H, Ma Z C, Zong W H 1998 Acta Phys. Sin. 47 502 (in Chinese) [马书懿、张伯蕊、秦国刚、韩和相、汪兆平、李国华、马振昌、宗婉华 1997 物理学报 47 502]
4. Elkurdi M, Boucaud P, Sauvage S 2003 Physica E 16 523
5. Karl Brunner 2002 Rep. Prog. Phys. 65 27