Author:
Bao Jun-Lin ,Lin Li-Yan ,He Liang ,Du Lei ,
Abstract
Based on the mechanism of ionization radiation damage in optoelectronic coupled devices (OCDs), the characteristic models of current transmitting rate (CTR) and 1/f noise are established. The results show that CTR degradation and noise increase are due to the increase of SiO2/Si interface defects at the collector junction and emit junction in phototransistor. The relationship between CTR degradation and noise change is established by the radiation dose. The correctnesses of characteristic models are validated in experiment. By the relationship between noise change and radiation dose, the high-dose radiation degradation can be predicted through the low-dose irradiation experiment. So noise can be used to evaluate the radiation tolerance of OCDs.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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