Author:
Zhao Cheng-Li ,Lü Xiao-Dan ,Ning Jian-Ping ,Qing You-Min ,He Ping-Ni ,Gou Fu-Jun ,
Abstract
In this study, molecular dynamics simulations are used to investigate atom F interacting with SiC at 300 K. Simulation results show that with the saturation of the deposition of F atoms on the surface, the compositions (SiFx and CFx groups (x4 is dominant. And the main etching mechanism of Si atoms is chemical etching.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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