Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact

Author:

Pan Shu-Wan ,Qi Dong-Feng ,Chen Song-Yan ,Li Cheng ,Huang Wei ,Lai Hong-Kai ,

Abstract

We have investigated the growth of thin selenium layer on Si (100) substrate by molecular beam epitaxy (MBE). By controlling the temperatures of the silicon substrate and the selenium source during growth, an ultrathin film of Se is successfully grown on the Si (100) substrate. As the Si (100) surface is passivated by the ultrathin film of Se, the electrical property of the Ti/n-Si (100) contact is shown to be ideally ohmic, with low resistance and relatively high thermal stability.

Publisher

Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences

Subject

General Physics and Astronomy

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