Author:
Qiao Yuan-Yuan ,Xiao Zheng-Guo ,Cao Xian-Cun ,Guo Hao-Min ,Shi Tong-Fei ,Wang Yu-Qi ,
Abstract
The influence of the major compensating defects As antisites (AsGa) and Mn interstitials (MnI) in the Ga0.946Mn0.054As diluted magnetic semiconductor (DMS) were studied by X-ray absorption spectra (XAS). The experimental results show that the defects in Ga0.946Mn0.054As grown at lower temperature (TS=200℃) is mainly AsGa, but at TS>230℃ MnI is the major defects. On the other hand, a higher LT-annealing temperature (250℃) can remove MnI out of the Ga0.946Mn0.054As lattice, and the highest Curie temperature (TC=130 K) is reached. Moreover, it is indicated that the LT-annealing process can increase the number of MnGa atoms by reducing the concentration of AsGa defects and driving MnI defects to fill up the holes left by AsGa.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
2 articles.
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