Investigations of three-terminal electronic measurement on quantum dot devices

Abstract

Theree-terminal electronic measurements have been performed on quantum devices with a modulation-doped two-dimensional(2D) electron gas structure.The resistance with the 2D electron gas and that with the tunnel resistance through the dots can be obtained by analyzing the experimental data.Our results show that the lateral coupling between the quantum dots mainly determine the transport properties of the quantum dot devices under small biases.