PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :N
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Published:1988
Issue:12
Volume:37
Page:1925
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
ZHANG YONG ,YU QI ,ZHENG JIAN-SHENG ,YAN BING-ZHANG ,WU BO-XI ,LI GUO-HUA ,WANG ZHAO-PING ,HAN HE-XIANG ,
Abstract
The photoluminescence of GaAs0.15P0.85: N has been investigated under hydrostatic pressure at 77 K. The NN1 emission is clearly seen when P>10kbar. Meanwhile, luminescence quenching and band narrowing of Nx line have been observed under pressure. The results show that the pressure effectively enhances the Nx→NN1 thermally assisted exciton transfer processes. The pressure behaviors of Nx and NN1 levels have been analysed and fitted to a theoretical model. The pressure coefficients of the levels and some parameters related to their wavefunctions have been determined by fitting calculations.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
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