Fabrication of transparent conductive AZO （ZnO:Al） film by plasma enhanced chemical vapor deposition

Abstract

AZO（ZnO:Al） polycrystalline thin films with strong adhesion to the substrate, as low as 89 Ω of sheet electronic resistivity and as high as 79% of visible light transmittance,are fabricated by PECVD （plasma enhanced chemical vapor deposition） method on glass and silicon substrate. The AZO film fabricated by PECVD is a useful attempt. The AZO transparent conductive film has the good photovoltaic properties like that of ITO （In2O3: Sn）; moreover, it is cheap, more nontoxic, and more stable in hydrogen plasma environment than ITO. The results obtained are very important to the selection of the technical conditions.