Average-bond-energy method in Schottky barrier height calculation
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Published:2003
Issue:3
Volume:52
Page:542
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Li Shu-Ping ,Wang Ren-Zhi ,
Abstract
Ten barrier heights of metal-semiconductor contacts are calculated by taking the average-bond-energy as the reference level- The coincidence degree of the calculational values and the experimental values is as good as that of Tersoff's charge-neutrality point method in theoretical calculation of metal-semiconductor contacts- The calculational results are much better than that of Harrison's tight-binding method and Cardona's dielectric midgap energy method-
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy