Radiation degradation mechanism of pn-junction diode based on 1/f noise variation-Reference-Cited by-同舟云学术

Radiation degradation mechanism of pn-junction diode based on 1/f noise variation

Published:2012 Issue:12 Volume:61 Page:127808
ISSN:1000-3290
Container-title:Acta Physica Sinica
language:
Short-container-title:Acta Phys. Sin.

Author:

Sun Peng ,Du Lei ,He Liang ,Chen Wen-Hao ,Liu Yu-Dong ,Zhao Ying ,

Abstract

Based on the relationship between ionizing damage effect and displacement damage effect under radiation degradation mechanism of pn-junction diode, and combined with the noise theory of radiation degradation of pn-junction diode, a change law of low frequency noise of pn-junction diode under radiation found. The inconsistency between the change laws of of two kinds of effects is found. Based on the experimental result, the relationship between two kinds of effects is judged. This relationship can explain the experimental result. This is very important for the device hardening research.

Publisher

Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences

Subject

General Physics and Astronomy

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