Density of defect states in low-k porous SiO2:F film researched by SCLC method
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Published:2006
Issue:6
Volume:55
Page:2936
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Gou Jie ,He Zhi-Wei ,Pan Guo-Hui ,Wang Yin-Yue ,
Abstract
The porous fluorine doped silica (SiO2:F) films were prepared by sol-gel method. The densities of the states (DOS) of the SiO2:F films and the effect of the dose of the F dopant were studied by space charge limited current(SCLC) techniques. Distribution of defect states N(E) in the vicinity of Fermi level in SiO2:F films was determined to be about 7×1015cm-3·eV-1. The dangling bounds on the surface of the porous film were the primary cause of the DOS.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy