Author:
Zhong Hong-Mei ,Chen Xiao-Shuang ,Wang Jin-Bin ,Xia Chang-Sheng ,Wang Shao-Wei ,Li Zhi-Feng ,Xu Wen-Lan ,Lu Wei ,
Abstract
This paper reports the fabrication of ZnMnO semiconductor by high-dose Mn impla ntion. We studied the influence of implantation dose and annealing on its optica l properties. The broad band at 575cm-1 in Raman spectrum is attribut ed to defects related to high-dose Mn implantion. The vibration modes at 528cm-1 are considered to be associated with Mn impurities. Room temperature photoluminescence spectra show that the high-dose Mn implantion can enhance the intensity in visible band.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
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