Author:
Li Zhuo-Xin ,Wang Dan-Ni ,Wang Bao-Yi ,Xue De-Sheng ,Wei Long ,Qin Xiu-Bo , , ,
Abstract
Porous silicon (PS) treated by water vapor annealing and vacuum annealing has been studied by positron annihilation lifetime spectroscopy and age-momentum correlation measurement. It is found that after water vapor annealing, non-radiative defects are reduced and defects dominating light source appear. These two types of defects change the lifetime and the S parameter of the positron annihilation and cause a drastic enhancement in the photoluminescence (PL) efficiency. Defects that cause the PL of PS show no obvious change after annealing at 300 ℃ in vacuum, therefore the PL of the sample is not influenced.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
2 articles.
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