STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE

Abstract

FN tunneling and hot hole (HH) stress induced leakage current (SILC) transient characteristics in thin gate oxide are investigated. Under both stress conditions, the stress induced leakage current obeys a power-law time dependence with different power factor. For HH SILC, the power factor significantly departs from -1. HH SILC is found to have a more pronounced transient effect. The results show that HH SILC can be attributed to positive oxide detrapping and annihilation of positive charge-assisted tunneling current. The latter can be diminished by substrate hot electron injection.