Author:
Yuan He ,Sun Chang-Zheng ,Xu Jian-Ming ,Wu Qing ,Xiong Bing ,Luo Yi ,
Abstract
The design and fabrication of multilayer antireflection (AR) coating based on plasma enhanced chemical vapor deposition (PECVD) is studied for its applications in optoelectronic devices. Deposition conditions for obtaining SiO2/SiNx thin films with large refractive index difference is determined through systematic study of factors influencing the refractive index of deposited SiNx. Four-layer SiO2/SiNx AR coating is designed to exhibit a reflectivity of less than 10-4 over 70 nm bandwidth. Reflectivity of the thin film structure at the center wavelength of 1550 nm remains less than 5×10-4 when the thickness deviation of any single layer is within ±5 nm from the designed value. Based on the simulation results, SiO2/SiNx multilayer AR coating is deposited on the end facet of a Fabry-Perot laser. By analyzing the output spectra of the laser, the residual reflectivity of the AR coating is determined to be on the order of 10-4 over the wavelength range of 1535—1565 nm.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献