Author:
Zhang Xu ,Zhou Yu-Ze ,Bi Qiang ,Yang Xing-Hua ,Zu Yun-Xiao ,
Abstract
The properties of memristor as the fourth basic circuit element are studied. The mathematical models in integral form for memristors with and without border constraint are developed. The simulation is done for the memristor with border constraint. The influences of the source frequency and model parameters on the memristor’s properties are analyzed and some conclusions are drawn. The model parameters considered include the doping ratio and the initial doping width, and their influnce on the current, voltage-current relation and flux-charge relation of the memrister are investigaled.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference30 articles.
1. Chua L O 1971 IEEE trans. on Circuit theory CT-18 507
2. Chua L O 1976 Proceedings of the IEEE 64 209
3. Dmitri B S,Gregory S S,Duncan R S, Stanley W 2008 Nature 453 80
4. James M,He T 2008 Nature 453 42
5. Gergel H N,Hamadani B,Dunlap B,Suehle J,Richter C, Hacker C, Gundlach D 2009 IEEE 30 706
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献