Calculation of positron lifetime of compound semiconductors
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Published:2010
Issue:1
Volume:59
Page:603
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Chen Xiang-Lei ,Zhang Jie ,Du Huai-Jiang ,Zhou Xian-Yi ,Ye Bang-Jiao ,
Abstract
On the basis of of local density approximation (LDA) and general gradient approximation (GGA), positron annihilation information has been calculated for five types of compound semiconductors, which are ZnO, GaN, GaAs, SiC and InP. The calculated information includes distribution of positron density, distribution of positron annihilation rate density, positron bulk lifetime, positron monovacancy lifetime and positron divacancy lifetime.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
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