Design and fabrication of large-area superconducting nanowire single photon detector arrays

Abstract

Superconducting nanowire single-photon detectors (SNSPDs) are currently one of the most mainstream single-photon detectors with excellent comprehensive performance, including low time jitter, high efficiency, low dark count and wide spectrum. However, the traditional single-pixel SNSPD suffers from a lack of spatial resolution and a small photosensitive surface, which creates bottlenecks associated with optical coupling efficiency. In addition, a single-pixel detector does not have the photon number resolution ability, whose working speed cannot be further improved due to the existence of dead time. In this case, array devices can make up for the above deficiencies. Therefore, the development of a large-area SNSPD array is the key to free-space photon detection and other applications. In recent years, experimental groups at home and abroad have started relevant research and have made great progress. However, the large-area SNSPD array faces intractable problems, including complex processes, low yield and difficult fabrication, owing to the photosensitive surface consisting of large amounts of superconducting nanowires. At present, the existing studies mainly use three-dimensional technology with complicated process steps to fabricate large array SNSPDs. How to simplify the process has become a research focus.<br>In this paper, we design a large-area nanowire array structure and propose an innovative plane process. Taking advantage of the property that the electron beam resists HSQ forming a silicon oxide electrical isolation layer after exposure, we fabricate a large array SNSPD with a simplified two-dimensional process and realize dimensionality reduction for the traditional three-dimensional process of a multilayer structure. By measurement in parallel, the devices enjoy high yield with no bad points found. In addition, a fully superconducting electrode is adopted in our design to reduce the thermal effect of resistors. We add series and parallel resistors in the pixels to divide the bias current evenly and expand the array scale optionally. At the same time, we also offer the design details of array SNSPDs, the related simulation of hot spots to verify the rationality of the design, the optimization of the preparation conditions of array devices, measurement scheme formulation and other related work.<br>This work provides an idea for the design and fabrication of ultra-large array SNSPDs, which is expected to be applied to the fabrication of megapixel array SNSPDs. Combined with an efficient readout circuit, a focal plane photon detection and imaging system with both a large field of view and high sensitivity will be realized.