Strain-driven alloy decomposition of In0.15Ga0.85As well layers in InAs/In0.15Ga0.85As dots-in-a-well structure
-
Published:2007
Issue:9
Volume:56
Page:5418
-
ISSN:1000-3290
-
Container-title:Acta Physica Sinica
-
language:
-
Short-container-title:Acta Phys. Sin.
Author:
Wang Chong ,Liu Zhao-Lin ,Chen Ping-Ping ,Cui Hao-Yang ,Xia Chang-Sheng ,Yang Yu ,Lu Wei ,
Abstract
Two InAs/In0.15Ga0.85As quantum dots-in-a-well (DWELL) samples have been grown by solid source molecular beam epitaxy (MBE). The increased size of InAs dots and more homogeneous dot-size distribution have been found in one InAs DWELL sample with growth optimized by changing both the growth temperature and the thickness in In0.15Ga0.85As well layers. The improved optical properties of this sample have also been confirmed by photoluminescence (PL) and piezomodulated reflectance (PzR) spectra. The numerical calculations based on effective mass approximation indicate that the increase of dot size and the improved optical properties are dominantly due to the strain driven alloy decomposition of In0.15Ga0.85As well layers.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy