Author:
Shi Li-Bin ,Ren Jun-Yuan ,Zhang Feng-Yun ,Zhang Guo-Hua ,Yu Zeng-Qiang ,
Abstract
MgB2 thin films were deposited by e-beam on Al2O3(001)substrates. Resistive transition of the MgB2/Al2O3 was investigated in different magnetic fields applied parallel or perpendicular to the ab plane of the films by the standard four-probe method. An activation energy model is suggested to analyze quantitatively the activation energy of flux lines and resistive transition in whole transition temperature range. The anisotropy parameter γ=Hc2ab(0)/Hc2c(0)=2.26 was obtained by analyzing the upper critical field using the polynomial Hc2(t)=Hc2(0)+At+Bt2.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
4 articles.
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