C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100)
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Published:2001
Issue:12
Volume:50
Page:2461
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
WANG SHAO-WEI ,LU WEI ,WANG HONG ,WANG DONG ,WANG MIN ,SHEN XUE-CHU ,
Abstract
We report the growth of Bi2Ti2O7 thin films on n type Si substrates by the chemical solution decomposition technique. Both the X-ray double-crystal diffraction and atomic force micro spectroscopy measurements are used to check the film properties. It is shown that the film is a multi crystal film dominated by the Bi2Ti2O7 phase. The C-V measurements are also performed on Au/Bi2Ti2O7/n-Si(100) MOS structure. It is revealed that both the fixed and mobile negative charges are contained in the film. The mobile negative charge results in the hysteresis loops on C-V curve.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy