Large optical cavity and small vertical divergence angle semiconductor lasers

Abstract

A novel coupled large optical cavity cascaded by tunnel-junction semiconductor lasers is put forward to resolve the major difficulties of ordinary laser diodes. In this structure several active regions are cascaded by tunnel junctions to couple a large optical cavity. This structure can solve the problem of catastrophic optical damage of facet and large vertical divergence caused by thin emitting area in ordinary laser diodes. The near-field facalur size reaches 1μm. Low-pressure metal-organic chemical vapor deposition is adopted to grow the novel semiconductor lasers. Slope efficiency as high as 0.80W/A per facet and vertical divergence angle of 20°and threshold current density of 277 A/cm2 are achieved from an uncoated novel laser device.