Affiliation:
1. Department of Physics. P R. Pote Engineering. College Amravati, India
2. Department of Physics Hutatma Rashtriya Arts and Science College, Ashti, Distt: Wardha, India
Abstract
Doped ZnO is seen as a potential substitute to the expensive Sn doped material, as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO were prepared by chemical vapor deposition. The lowest resistivity and highest carrier concentration ever reported for CVD grown ZnO, Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.
Physical properties like Electrical Conductivity of Zinc Oxide (ZnO) are studied with different doping in it. The dopant to study the varying physical properties of the ZnO semiconductor with respect to Gallium (Ga) semiconductor with changing doping by weight percent of0, 1, 3 and 5 wt. % gallium doped ZnO system are reported here. The electrical properties include dc electrical studies.
Subject
Cardiology and Cardiovascular Medicine
Reference29 articles.
1. Seiyama T., Kato A., Fujiishi K., Nagatani M., Anal. Chem., 34(1962), 1502.
2. Moseley P. T., Sens Actuators B Chem., 6(1992), 149.
3. Seiyama T., Era F., Zairyo-Kagaku Jpn., 8(1971), 232.
4. Pizzini S., Butta N., Narducci D., Palladino M., J. Electrochem. Soc., 136(1989), 1945.
5. Wagh M. S., Jain G. H., Patil D. R., Patil S. A., Patil L. A., Sens. Actuators B, Chem. , 115(2006), 128.