Study of Raman Redshift of Nanoscale Semiconductors

Author:

Madan Singh 1,L.M. Mafereka 2

Affiliation:

1. Department of Physics and Electronics, National University of Lesotho, P O Roma 180, L

2. Department of Physics and Electronics, National University of Lesotho, P O Roma 180, Lesotho, Southern Africaesotho, Southern Africa

Abstract

Considering the Lu model and dangling bonds, we derived equations for the optoelectrical properties of semiconductors at the nanoscale. The size and shape-dependent band gap and phonon frequency of nanoparticles are studied. It is reported that the bandgap increases on decreasing the size, while the phonon frequency decreases on reducing the particle size in the nano range. The effect of shape is included in our research. It is projected that the effect is considerable on changing the shape from spherical to film shape. The developed model may provide new insight, into where the experimental findings are missing.

Publisher

Technoscience Academy

Subject

General Medicine

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